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Kingston ME KSM32RD4 64HCR 64GB 3200MHz DDR4 ECC Reg CL22 DIMM 2Rx4 Hynix C
Kingston ME KSM32RD4 64HCR 64GB 3200MHz DDR4 ECC Reg CL22 DIMM 2Rx4 Hynix C
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$216.84 USD
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KSM32RD4/64HCR
64GB 2Rx4 8G x 72-Bit PC4-3200
CL22 Registered w/Parity 288-Pin DIMM
DESCRIPTION
Kingston's KSM32RD4/64HCR is a 8G x 72-bit (64GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) registered w/ parity¸ 2Rx4¸ ECC¸ memory module¸ based on thiry-six 4G x 4-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
FEATURES
Power Supply: VDD = 1.2V
VDDQ = 1.2V
VPP = 2.5V
VDDSPD = 2.41V to 2.75V
Functionality and operations comply with the DDR4 SDRAM datasheet
16 internal banks
Bank Grouping is applied¸ and CAS to CAS latency (tCCD_L¸ tCCD_S) for the banks in the same or different bank group accesses are available
Data transfer rates: PC4-3200¸ PC4-2933¸ PC4-2666¸ PC4-2400¸ PC4-2133¸ PC4-1866¸ PC4-1600
Bi-Directional Differential Data Strobe
8 bit pre-fetch
Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
Supports ECC error correction and detection
On-Die Termination (ODT)
Temperature sensor with integrated SPD
This product is in compliance with the RoHS directive.
Per DRAM Addressability is supported
Internal Vref DQ level generation is available
Write CRC is supported at all speed grades
CA parity (Command/Address Parity) mode is supported.
64GB 2Rx4 8G x 72-Bit PC4-3200
CL22 Registered w/Parity 288-Pin DIMM
DESCRIPTION
Kingston's KSM32RD4/64HCR is a 8G x 72-bit (64GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) registered w/ parity¸ 2Rx4¸ ECC¸ memory module¸ based on thiry-six 4G x 4-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
FEATURES
Power Supply: VDD = 1.2V
VDDQ = 1.2V
VPP = 2.5V
VDDSPD = 2.41V to 2.75V
Functionality and operations comply with the DDR4 SDRAM datasheet
16 internal banks
Bank Grouping is applied¸ and CAS to CAS latency (tCCD_L¸ tCCD_S) for the banks in the same or different bank group accesses are available
Data transfer rates: PC4-3200¸ PC4-2933¸ PC4-2666¸ PC4-2400¸ PC4-2133¸ PC4-1866¸ PC4-1600
Bi-Directional Differential Data Strobe
8 bit pre-fetch
Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
Supports ECC error correction and detection
On-Die Termination (ODT)
Temperature sensor with integrated SPD
This product is in compliance with the RoHS directive.
Per DRAM Addressability is supported
Internal Vref DQ level generation is available
Write CRC is supported at all speed grades
CA parity (Command/Address Parity) mode is supported.
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